| PART |
Description |
Maker |
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060
3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060
1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060
DC-DC CONVERTER 50~60W DC - DC转换器的5060
XC2VP7-6FFG672C DC - DC转换器的5060
2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060
DC-DC CONVERTER 50~60W 的DC - DC转换器的5060
6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| XC2S100-5FG256C XC2S100-5FG256I XC2S100 XC2S15-5VQ |
Spartan-II FPGA Family Data Sheet
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP144
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PBGA256
150000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 150000 GATES, 263 MHz, PBGA456
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA256
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA456
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PQFP144
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP100
150 000 SYSTEM GATE 2.5 VOLT FPGA (IQ AU - NOT RECOMMENDED for NEW DESIGN
15000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
50000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
Spartan-II FPGA Family
Second generation ASIC replacement technology
|
Xilinx, Inc.
XILINX INC
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| XC2S200E-6FG676C XC2S200E-6FG676I XC2S200E-6FGG456 |
Second generation ASIC replacement technology
FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA676
100,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA256
400000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 52000 GATES, 357 MHz, PBGA456
300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 400 MHz, PBGA456
Spartan-IIE FPGA
Product Availability
|
XILINX INC
Xilinx, Inc.
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|
